<?xml version="1.0" encoding="UTF-8"?><feed xmlns="http://www.w3.org/2005/Atom" xmlns:dc="http://purl.org/dc/elements/1.1/">
<title>Analytical Models for Threshold and Punchthrough Voltages of Small-Geometry Mosfets with Implanted Channels in VLSI</title>
<link href="http://127.0.0.1/xmlui/handle/123456789/2883" rel="alternate"/>
<subtitle/>
<id>http://127.0.0.1/xmlui/handle/123456789/2883</id>
<updated>2026-04-18T20:27:54Z</updated>
<dc:date>2026-04-18T20:27:54Z</dc:date>
<entry>
<title>Analytical Models for Threshold and Punchthrough Voltages of Small-Geometry Mosfets with Implanted Channels in VLSI</title>
<link href="http://127.0.0.1/xmlui/handle/123456789/2885" rel="alternate"/>
<author>
<name>DASGUPTA, AMITAVA</name>
</author>
<id>http://127.0.0.1/xmlui/handle/123456789/2885</id>
<updated>2015-06-01T12:16:07Z</updated>
<published>1988-08-01T00:00:00Z</published>
<summary type="text">Analytical Models for Threshold and Punchthrough Voltages of Small-Geometry Mosfets with Implanted Channels in VLSI
DASGUPTA, AMITAVA
</summary>
<dc:date>1988-08-01T00:00:00Z</dc:date>
</entry>
</feed>
